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Abstract Terahertz (THz) technologies have become a focus of research in recent years due to their prominent role in envisioned future communication and sensing systems. One of the key challenges facing the field is the need for tools to enable agile engineering of THz wave fronts. Here, we describe a reconfigurable metasurface based on GaN technology with an array-of-subarrays architecture. This subwavelength-spaced array, under the control of a 1-bit digital coding sequence, can switch between an enormous range of possible configurations, providing facile access to nearly arbitrary wave front control for signals near 0.34 THz. We demonstrate wide-angle beam scanning with 1° of angular precision over 70 GHz of bandwidth, as well as the generation of multi-beam and diffuse wave fronts, with a switching speed up to 100 MHz. This device, offering the ability to rapidly reconfigure a propagating wave front for beam-forming or diffusively scattered wide-angle coverage of a scene, will open new realms of possibilities in sensing, imaging, and networking. 

As a key potential component of future sixth-generation (6G) communication systems, terahertz (THz) technology has received much attention in recent years. However, a lack of effective high-speed direct modulation of THz waves has limited the development of THz communication technology. Currently, most high-speed modulators are based on photonic systems that can modulate electromagnetic waves with high speed using sophisticated optoelectronic conversion techniques. Yet, they usually suffer from low conversion efficiency of light to the THz range, resulting in low output power of the modulated THz waves. Here, we describe a guided-wave modulator for THz signals whose performance nearly matches that of existing in-line fiber-optic modulators. Our results demonstrate a maximum modulation depth greater than 20 dB (99%) and a maximum sinusoidal modulation speed of more than 30 GHz, with an insertion loss around 7 dB. We demonstrate the capabilities of this modulator in a point-to-point communication link with a 25 Gbit/s modulation speed. Our modulator design, based on near-field coupling of a THz transmission line to a single resonant meta-element, represents a powerful improvement for on-chip integrated high-performance THz devices. 

Abstract In the past ten years, terahertz technology has developed rapidly in wireless communications, spectroscopy, and imaging. Various functional devices have been developed, such as filters, absorbers, polarizers, mixers, and modulators. Among these, the terahertz phase modulation is a current research hotspot. It is the core technology to realize flexible control of the terahertz wavefront, beam scanning, focusing deflection. It is indispensable in terahertz wireless communication, high-resolution imaging, and radar systems. This review summarizes the research progress of terahertz phase modulators from the two major types: free space and guided wave integration. Among these, the free space terahertz phase modulator is realized by combining the tunable materials and artificial metasurfaces. Based on different types of tunable materials, the terahertz free space phase modulator combining the semiconductor, liquid crystal, phase change materials, graphene, and other two-dimensional materials are introduced, and the influence of different materials on the phase modulation performance is discussed and analyzed. The monolithic integration and waveguide embedding methods are introduced separately, and the characteristics of different forms of terahertz-guided wave phase modulation are also discussed. Finally, the development trends of terahertz phase modulators, possible new methods, and future application requirements are discussed. 

The bottleneck of inter-chip communication speed, for instance that between logic and memory units is a long-standing issue in acquiring ultra-fast computing. While research from two extreme ends of technologies: electrical, and optical interconnect have their own pitfall in constructing an energy-economic route of communication with high bandwidth density, a radically different technology named spoof plasmon based communication may bring new insight towards addressing the issue. This technology smoothly interweaves the advantages of electrical interconnect and that of optical ones. In the present work, we have given a proof-of-concept demonstration of the signal transfer capacity of spoof plasmon parallel data-bus. We demonstrated that the spoof plasmon channel can accommodate two different kinds of mode: electro-SSPP mode and optoSSPP mode. Depending on the data-traffic, SSPP channel can be dynamically reconfigured for supporting either of the two modes for information transfer in order to minimize energy consumption. In addition, we also endeavored to answer the question that whether the metasurface based information transfer system can be reliable in case of patterning irregularity induced by fabrication process variations.